1/9 march 2004 STB20PF75 p-channel 75v - 0.10 ? - 20a d2pak stripfet? ii power mosfet typical r ds (on) = 0.10 ? exceptional dv/dt capability 100% avalanche tested application oriented characterization description this power mosfet is the latest development of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. applications motor control dc-dc & dc-ac converters type v dss r ds(on) i d STB20PF75 75 v < 0.12 ? 20 a add suffix ?t4? for ordering in tape & reel 1 3 d 2 pak to-263 (suffix ?t4?) absolute maximum ratings ( ?) pulse width limited by safe operating area (1) i sd 20a, di/dt 200a/s, v dd v (br)dss , t j t jmax (2) starting t j = 25 o c, i d = 10 a, v dd = 30v note: for the p-channel mosfet actual polarity of voltages and current has to be reversed symbol parameter value unit v ds drain-source voltage (v gs = 0) 75 v v dgr drain-gate voltage (r gs = 20 k ? ) 75 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c 20 a i d drain current (continuous) at t c = 100c 14 a i dm ( ?) drain current (pulsed) 80 a p tot total dissipation at t c = 25c 80 w derating factor 0.53 w/c dv/dt (1) peak diode recovery voltage slope 10 v/ns e as (2) single pulse avalanche energy 350 mj t stg storage temperature -55 to 175 c t j operating junction temperature internal schematic diagram
STB20PF75 2/9 thermal data (*) when mounted on 1 inch 2 fr-4 board, 2 oz of cu electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-pcb t l thermal resistance junction-case thermal resistance junction-pcb maximum lead temperature for soldering purpose (1.6 mm from case, for 10 sec) max max typ 1.88 34 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 234v r ds(on) static drain-source on resistance v gs = 10 v i d = 10 a 0.10 0.12 ? symbol parameter test conditions min. typ. max. unit g fs forward transconductance v ds = 15 v i d =10 a 15 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1150 170 70 pf pf pf
3/9 STB20PF75 switching on (*) switching off (*) source drain diode (*) (*) pulse width [ 300 s, duty cycle 1.5 %. ( ?) pulse width limited by t jmax symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 37.5 v i d = 10 a r g =4.7 ? v gs = 10 v (resistive load, figure 1) 20 51 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =60v i d =20a v gs =10v (see test circuit, figure 2) 38 7 10 52 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 60 v i d = 10 a r g =4.7 ? v gs = 10 v (resistive load, figure 1) 40 13 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 20 80 a a v sd (*) forward on voltage i sd = 20 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 20 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 3) 80 250 6.2 ns nc a electrical characteristics (continued) safe operating area thermal impedance
STB20PF75 4/9 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/9 STB20PF75 normalized gate threshold voltage vs temperature normalized on resistance vs temperature source-drain diode forward characteristics normalized breakdown voltage vs temperature . .
STB20PF75 6/9 fig. 2: gate charge test circuit fig. 3: test circuit for diode recovery behaviour fig. 1: switching times test circuits for resistive load
7/9 STB20PF75 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
STB20PF75 8/9 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r 50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix ?t4?)* d 2 pak footprint tape mechanical data
9/9 STB20PF75 i nformation furnished is believed to be accurate and reliable. ho wever, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is registered trademark of stmicroelectronics all other names are the property of their respective owners. ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco -singapore - spain - sweden - switzerland - united kingdom - united states. www.st.com
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